Improvement of RF Performance by Using Tunnel Diode Body Contact Structure in PD SOI nMOSFETs

Radio-frequency (RF) performance of multi-finger partially depleted silicon-on-insulator (SoI) nMOSFETs with tunnel diode body contact (TDBC) structure is investigated in this letter. The TDBC structure suppresses floating-body effect and body instability significantly and shows less drain conductance degradation with respect to FB and TB devices. The peak cutoff frequency (fT) and maximum oscillation frequency (fMAX) of TDBC devices are 96.4 and 132.8 GHz, respectively. Due to lower parasitic resistances and capacitances, the device with TDBC structures represents an improvement of 10% for the fT and of 90% for the fMAX compared with conventional T-gate body-contact devices. The investigation results indicate that TDBC SoI MOSFETs are a good candidate for analog and RF applications.