Evolution of Unified-RAM: 1T-DRAM and BE-SONOS Built on a Highly Scaled Vertical Channel

$4{\rm F}^{2}$
multifunctional unified-RAM based on a highly scaled vertical channel is experimentally demonstrated. The high performance and reliable operation of bandgap-engineered nonvolatile memory as well as underlap 1T-DRAM with nonuniform channel doping for a long retention time and endurable operation is presented in a single transistor.