Silicon Nitride anti-reflective coating for intermediate band InAs/GaAs PV devices

This paper presents the characterisation of several solar cell devices using a single layer of anti-reflective coating (ARC). Several devices, consisting of InAs/GaAs quantum dots cylindrical diodes, were fabricated and characterised. The main difference between the used materials is the inter-dot doping profile. The J-V characteristic for the devices has been obtained under 1 sun showing an increasing of the short circuit current density (Jsc) by almost 40% in the undoped dots sample. We show that the use of 100 nm of Silicon Nitride (Si
₃
N
₄
) enhance the efficiency by about another 2.5% resulting in efficiencies up to 11.6% for single junction diodes.