Bi/sub 2/Te/sub 3/ thin films grown by MOCVD process

The growth of Bi/sub 2/Te/sub 3/ thin films by metal organic chemical vapor deposition (MOCVD) using diethytellurium and trimethylbismuth as tellurium and bismuth sources respectively is investigated on pyrex substrates. The results of growth rate, morphology, electrical and thermoelectrical properties as a function of growth parameters are given. The prepared films were always n-type. Film properties, such as electrical resistivity, mobility, carrier concentration, thermoelectric power and X-ray diffraction were studied at 300 K. Increasing VI/V ratio was found to reduce the electrical resistivity to 12 /spl mu//spl Omega/.m. The Hall mobility varies from 28 and 150cm/sup 2//V.s. The figure-of-merit obtained was Z=2.48/spl times/10/sup -3/ K/sup -1/. These initial results suggest a significant potential of MOCVD growth for large scale production of thermoelectric material.