Radiation degradation of light-emitting diodes

The present paper concerns the comparative complex study of degradation kinetics of light-emitting diodes in the course of the long neutron and gamma irradiation and tests for non-failure operation at thermocurrent loadings without irradiation. Serially released devices on the basis of A3B5 connections (arsenide and gallium phosphide) and GaAlAs solid solutions were exposed to research.