n-TiO2/p-Si anisotype semiconductor heterojunction structure

The dominating current-transport mechanisms were established: multistep tunnel-recombination via surface states at the metallurgical interface TiO
2
/Si under low forward bias; the dominating mechanism of charge carriers' transport is tunneling at forward bias V > 0.6 V. The reverse current through the heterojunctions under investigation was analyzed in the scope of the tunnel mechanism.