Electrical properties of photosensitive heterojunctions n-TiN/p-CdTe

Photosensitive heterojunctions n-TiN/p-CdTe were obtained for the first time. The dominating mechanism of current transport through the heterojunctions was determined under forward biases. The heterojunctions produce open circuit voltage V
oc
= 0,35 V, short circuit current I
sc
= 1,88 mA/cm
²
and fill factor FF = 0,51 at illumination 80 mW/cm
²
.