Current transport mechanisms in n-CdO/p-InSe photosensitive heterojunctions

n-CdO/p-InSe photosensitive heterojunctions were fabricated by dc reactive magnetron sputtering of CdO thin film with n-type conductivity onto freshly cleaved p-InSe single-crystal substrates. Temperature dependences of the I-V characteristics of the heterojunctions are studied and current transport mechanisms through the potential barrier at forward and back biases are identified.