Peculiarities of electron transport in pHEMT on donor-acceptor doping heterostructures

The study results of physical mechanisms which provide abrupt increase of output power of pHEMT with donoracceptor doping heterostructures are presented. It is shown, that complementary using of potential barriers provokes abrupt decrease of the role of transversal space transfer of electrons in the heterostructure, and increases the role of energy quantization in transistor channels.