VUV/Low-Energy Electron Si Photodiodes With Postmetal 400 $^{\circ}{\rm C}$ PureB Deposition

Pure boron (PureB) chemical-vapor deposition performed at 400°C is applied as a postmetalization process module to fabricate near-ideal p
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n photodiodes with nm-thin PureB-only beam-entrance windows. The photodiodes have near-theoretical sensitivity and high stability for optical characterization performed with either UV light down to a wavelength of 270 nm or low-energy electrons down to 200 eV.