Quantum transport simulation of Bilayer pseudoSpin Field-Effect Transistor (BiSFET) with tight-binding hartree-fock model

A simulation tool for modeling superfluid quantum transport in the proposed Bilayer Psuedo-spin Field Effect Transistor (BiSFET) and related systems is described and demonstrated. An interlayer Fock exchange interaction is incorporated into a π-orbital based atomistic tight-binding model of transport in two graphene layers separated by a tunnel barrier. Simulation results support and extend expectations based on bulk analysis such as superfluid condensate formation, enhanced interlayer tunneling and the sub-thermal voltage (sub-k
_B
T/q) switching. Extension of this method to other quasi-two dimensional material systems should be possible as well.