PDK development for 10nm III-V/Ge IFQW CMOS technology including statistical variability

From 3D Monte Carlo and drift diffusion TCAD simulations to compact models, we develop an early PDK of 10nm CMOS node technology employing co-integration of 15nm physical channel length III-V and Ge transistors. By taking into account the statistical variability, reliable predictions of the impact of variability on circuit performance and yield can be delivered to achieve variation aware design.