Thermal Neutron-Induced Soft Errors in Advanced Memory and Logic Devices

Thermal neutron-induced soft errors (SERs) for memory and logic devices have reappeared as a reliability issue for advanced IC technologies due to the presence of the B
¹⁰
isotope in B2H6 carrier gases used during manufacturing. Here, we show that thermal neutron SER significantly decreases with Si technology progression, becoming an insignificant contributor to overall circuit SER below the 28-nm technology node.