High-temperature characterization and comparison of 1.2 kV SiC power MOSFETs

The aim of this work is to characterize and compare the high-temperature performances of the latest generation 1.2 kV Silicon Carbide (SiC) MOSFETs from three well-known manufacturers: Cree, ROHM, and GE. A complete static characterization is performed from 25 °C to 200 °C, including threshold voltage, specific on-resistance, leakage current, junction capacitances, and internal gate resistance. The dynamic performance of each device is evaluated through double-pulse tests conducted from 25 °C to 200 °C. From these double-pulse tests, the switching losses are computed.