Effect of oxide precipitates on the mechanical strength of large diameter epitaxial wafers

The effects of oxide precipitates on mechanical strength are investigated in CZ, p/p-, p/p+ and p/p++ wafers during device manufacturing. In high temperature processes, the mechanical strength of epitaxial wafers is far superior to that of CZ wafers. In contrast, the mechanical strength of all the wafers remains sufficient in low temperature processes. The slip dislocation behavior can be explained by the sizes of oxide precipitates formed in each wafer.