Novel CF/sub 4/+H/sub 2/O ashing process for reduction of via resistance

This paper will describe the application of a new ashing chemistry incorporating H/sub 2/O and CF/sub 4/ for improved polymer strippability and reduced via resistance for deep submicron multilevel metalizations. Results are shown from integrating the ash into both 0.25 and 0.35 /spl mu/m ASIC processes.