Temperature and stress dependent properties of barrier type anodic Al2O3 MIM capacitor

This paper presents a high-k barrier type anodic Al
₂
O
₃
Metal-Insulator-Metal (MIM) capacitor for mixed signal/RF applications. The anodic oxide MIM capacitor shows high capacitance density of 6.01fF/μm
²
and low voltage coefficient of capacitance less than 500ppm/V. Due to reduced defect density and improved polarization, the capacitor exhibits variability of less than 6% in the frequency range of 1KHz to 1MHz at 3V. The fabricated capacitor also shows a high breakdown field of 8.7MV/cm. The measured leakage current density is 1nA/cm
²
at 5V at room temperature which is the lowest reported value till date. The capacitor also exhibits improved reliability as TBD of 10 years for applied voltage of 2V at room temperature. The capacitor meets the requirements of ITRS 2012 predicted for wireless and mixed signal/RF technologies.