ESD protection circuit for a sub-1dB noise figure LNA in a SiGe:C BiCMOS technology

This paper presents the ESD protection strategy designed for a fully integrated base station LNA with a sub-1dB noise figure, +35dB gain, large output swing and a high linearity. With a novel ESD protection circuit, implemented on RF input and output pins, the circuit achieved 2.5kV HBM and 750V CDM.