Dissipative transport in nanoscale monolayer MoS2 transistors

Performances of monolayer MoS
₂
transistors with phonon scattering are investigated. The on-current of a 20nm long device can be degraded by 40% with phonon scattering compared with the ballistic limit. The sub-threshold swing (SS) and drain induced barrier lowering (DIBL) are found to be insensitive to phonon scattering. SS <; 100mV/decade can be achieved with a gate length L
_G
> 5nm and DIBL <; 100mV/V can be achieved with a L
_G
> 8nm for a double gate structure with a 3nm thick high-k gate insulator. Treatment of phonon scattering is important for accurate assessment of intrinsic delay and on/off ratio even at L
_G
~ 10nm.