A TaOx based threshold switching selector for the RRAM crossbar array memory

Suppressing the sneak current in the crossbar array is a great challenge for the high-density integration of RRAM. In this paper, a novel threshold switching selector device with the simple structure of Pt/TaO
x
/Pt is proposed for RRAM application. The measured data shows that this device exhibits good selector characteristics, such as tight cycle to cycle distribution of switching voltage, good resistance uniformity and abrupt switching properties with no hysteresis phenomenon. The conductive current of the selector is induced mainly by the Schottky emission mechanism. And the threshold switching phenomenon may be caused by the electrical breakdown of the defective TaO
x
film. The threshold switching selector shows a great potential for the high-density RRAM application.