A new concept of enhanced-mode GaN HEMT using fluorine implantation in the GaN layer

In this paper, a new concept of normally-off HEMT is proposed: it uses for the first time the implantation of Fluorine ions in the GaN layer below the AlGaN/GaN interface rather than in the AlGaN layer. Simulation results show that the proposed method is more effective when it comes to the Fluorine concentration required to achieve normally-off operation.