Feature size dependence of total dose effects in the irradiated NMOS devices

Total ionizing dose irradiation effect in NMOS Devices with 0.18µm, 0.35µm and 1µm feature size was studied. Due to the thickness of gate oxide, radiation threshold voltage induced by total dose irradiation became lower as feature size increased. But the leakage current of NMOS devices induced by TID irradiation increased obviously because of trench sidewall leakage.