Development of a 64×64-pixel ion camera chip for ionic imaging using an unmodified 0.35 μm CMOS technology

An Ion Sensitive Field Effect Transistor (ISFET) array was designed for detecting non-equilibrium ion-flux activity and pH alterations on a 1mm
²
sensing area. The ion sensitive array consists of a 64 × 64 pixel system, each one of them sized 10.2 μm × 10.2 μm using a standard CMOS 0.35 μm four metal layer technology. Appropriate digital logic was embedded in circuitry to ensure a fast and efficient readout. The ISFET Array has successfully monitored pH oscillations in slime mould, the Belousov-Zhabotinsky reaction and the growth of polyoxometalate membranes.