Cold cathode array coated with cubic boron nitride

A thin film of boron nitride is synthesized on a Si substrate using BCl
₃
and NH
₃
as source gases, by thermal chemical vapor deposition. Cubic boron nitride (c-BN) is preferentially synthesized using a Fe thin film. The c-BN film exhibits negative electron affinity. A gated silicon field emitter array coated with a c-BN thin film for multi electron beam lithography is developed. Large emission current can be achieved in BN-coated Si emitter.