High current modulation in optically controlled MOSFET using directly-bonded SiO/sub 2/-InP

High current modulation in an optically controlled MOSFET has been obtained. The structure of the device was composed of the absorption region of pin photo diode and the MOSFET region bonded by using SiO/sub 2/-InP direct wafer bonding technique. When the laser light with a wavelength of 1.50 /spl mu/m was irradiated to the absorption region, more than 550 /spl mu/A of drain-to-source current modulation and a maximum responsivity of more than 280 A/W was obtained.