Ionizing radiation differential sensor based on thick gate oxide MOS transistors

This work presents a differential MOS circuit for ionizing radiation dose estimation. Thick gate oxide n-MOS transistors are used as the sensing pair, with p-MOS load to enhance the radiation response. The circuit is analyzed and tested under gamma (
⁶⁰
Co) radiation. Results show a radiation sensitivity increase up to 8 V/Gy and an improved thermal drift rejection ratio in comparison with a single n-MOS dosimeter.