Large-area infrared-emitting diodes with an output optical power greater than 1 W

The achievement of high-optical power infrared-emitting diodes (IRED's) is a permanent research topic. Large-area IRED's (about 200 times larger than standard ones) is the approach presented in this work in which AlGaAs IRED's have been developed, manufactured and characterized. For a 11-mm/sup 2/ sized IRED an output optical power of 1060 mW at 18 A of pulsed current has been obtained. The work shows that: (1) large-area IRED's are capable of achieving very high-optical power if series resistance is well controlled; (2) the required driving circuits could be simple; (3) large-area IRED's are more easily manufactured than series-connected arrays; (4) have dimensions compatible with high yields; (5) can achieve fast switching times; and (6) allow that both the current density and the thermal resistance decreases. Finally, a design criteria for optimizing the device area is presented.