Fully Ion-Implanted and Screen-Printed 20.2% Efficient Front Junction Silicon Cells on 239 cm $^{\bf 2}$ n-Type CZ Substrate

In this study, we present fully ion-implanted screen-printed high-efficiency 239 cm
²
n-type silicon solar cells that are fabricated on pseudosquare Czochralski wafers. Implanted boron emitter and phosphorous back-surface field (BSF) were optimized to produce n-type front junction cells with front and back SiO
₂
/SiN
_x
surface passivation and rear point contacts. Average efficiency of 19.8%, with the best efficiency of 20.2%, certified by Fraunhofer ISE, Freiburg, Germany, was achieved. In addition, the planarized rear side gave better surface passivation, in combination with optimized BSF profile, raised the average efficiency to ~20% for the fully implanted and screen-printed n-type passivated emitter, rear totally diffused cells.