Light-induced carriers in metal/porous silicon/p-Si structures

In this paper light-induced carriers in Al/PS/p-Si/Al structure are presented. Nyquist plots and admittance as a function of frequency and wavelengths were in detail analyzed. Admittance spectroscopy is a power tool in the study of semiconductors. This diagnostic technique gives information about uncompensated conductance and capacitance of single and multilayer structures. Moreover we can find out structural properties of investigated material.