Surface carrier recombination of optically excited silicon studied by terahertz time-domain spectroscopy

We investigate surface recombination of photoexcited carriers at silicon surface by terahertz time-domain spectroscopy (THz-TDS). The surface is illuminated at 365 nm UV laser, and evaluates the surface recombination velocity (SRV). The values of SRV observed on silicon surface strongly reduce under illumination.