Theoretical estimation of optical confinement factor and its effects on DC characteristics of long wavelength transistor

In this paper, we introduce an approximate way to estimate the optical confinement factor (OCF) in Double Heterostructure Long Wavelength Transistor Lasers (DH-LWTL). Calculating the steady state electron density and differential optical gain, we investigate the OCF effects on the device DC performances as a function of the base width. Our results exhibit an optimum base width of 48nm for which the threshold current density is minimized down to 4.6 kA/cm
^-2
, which are in good agreement with experimental data for diode lasers with similar structures.