Analysis and optimization of tunnel FET with band gap engineering

In this paper a high performance double gate tunnel field effect transistor (DG-TFET) is proposed. Band gap engineering is achieved in order to improve the device performance. This novel TFET is formed from variable band gap materials with 20 nm channel length to enhance on current and reach to low off-current. With precise selection of mole fraction in materials, Al
_0.5
Ga
_0.6
As and In
_0.85
Ga
_0.15
As are designated to all region in the device and important characterises of TFET are optimized. Low sub threshold swing below 60 mv/dec I
_on
/I
_off
ratio as high as 10
¹²
are the result of the simulation.