Channel thermal noise modeling and high frequency noise parameters of tri-gate FinFETs

With rapid downscaling of conventional MOSFETs, alternative device architectures are essential. Post-planar non-classical FinFET structures are becoming a popular choice for their reduced short channel effects, electrostatic integrity as well as superior RF performance. Noise is a fundamental problem for RF circuit design. In this work, to understand RF performance, high frequency noise parameters in tri-gate FinFETs are studied in detail. Methods and models for extracting different noise parameters, such as the minimum noise figure, equivalent noise resistance and optimum source admittance, are developed from 50-Ω noise figure measurements. A channel thermal noise model of tri-gate FinFETs is shown in comparison with the experimental data.