Space-charge generation-recombination current in an abrupt P-N junction subjected to small bias voltage

A new modeling is proposed for the space-charge generation-recombination current in a P-N junction, based on the Boltzmann statistics and by accounting for the free carriers in the space-charge region (SCR). This model, which does not necessitate the knowledge of the x-variation of the potential in the SCR, is shown to provide more accurate results than those furnished by the available models and the corresponding model used in SPICE. The proposed model can be easily incorporated in the P-N junction characterization of SPICE or any other similar circuit simulator.