IGBT with shallow emitter ballast

Two approaches of forming IGBTs with shallow emitter ballast have been investigated in this study. These designs are compared in terms of their layout scheme, fabrication steps and device performance. This shallow emitter ballast provides the necessary trade-off between on-state and ruggedness of IGBTs. Using this concept 600 V IGBTs with an on-voltage of /spl sim/1.6 V@100 A/cm/sup 2/, turn-off energy of /spl sim/30 /spl mu/J/A, short-circuit time of /spl sim/27 /spl mu/s, and a maximum UIS energy of /spl sim/13.4 mJ/A have been fabricated.