Compact NOI Nanodevice Simulation

The nothing-on-insulator (NOI) transistor was recently proposed and is based on the conduction through a vacuum nanocavity. The main contributions of this brief are: 1) the NOI device study on alternative materials and 2) New key device parameters. The simulations reveal optimum NOI structure with 15-nm film thicknesses, possessing a subthreshold drain slope of 50 mV/dec, I
_ON
/I
_OFF
ratio of 10
¹²
, and a switching time under 0.3 ps. Although the NOI device is related to the tunnel or vacuum device as phenomena, it distinctly evolves toward a compact nanostructure, with the main advantage of nanometric sizes on all three directions, becoming interesting for very large-scale integration systems.