90nm W\Al2O3\TiW\Cu 1T1R CBRAM cell showing low-power, fast and disturb-free operation

In this paper we demonstrate excellent memory performances of a 90nm CMOS-friendly W\Al
₂
O
₃
\TiW\Cu CBRAM cell integrated in a 1T1R configuration and withstanding the back-end of line thermal budget of 400°C. The cell exhibits low-power and highly controlled set and reset operations, allowing reversible multilevel programming controlled by both the set current and the reset voltage. Low-voltage (<;3V) operation is obtained down to 10ns-long write pulse both for set and reset, and allowing >10
⁶
write endurance with a 2-decade memory window. State stability is assessed up to 125°C. Moreover, due to low slope of the voltage-log(time) relationship the cell also shows excellent voltage-disturb immunity assessed up to +/-0.5V and extrapolated to 10 years.