Recovery dynamics and fast (sub-50ns) read operation with Access Devices for 3D crosspoint memory based on mixed-ionic-electronic-conduction (MIEC)

BEOL-friendly Access Devices (AD) based on Cu-containing MIEC materials[1–4] are shown to be capable of both maintaining and moving rapidly between all the roles necessary for 3D crosspoint memory (un-selected, half-selected, selected(read), and selected(write)). Ultra-low leakage is maintained over hours, recovery dynamics after both write (30–50uA) and read (3–6uA) operations are explored, and read operations fast enough for use with MRAM (sub-50ns) at low voltages are demonstrated.