Strained extremely-thin body In0.53Ga0.47As-on-insulator MOSFETs on Si substrates

We report the first demonstration of strained In
_0.53
Ga
_0.47
As-on-insulator (-OI) MOSFETs on Si substrates using the direct wafer bonding (DWB) technique. 1.7 % highly-strained In
_0.53
Ga
_0.47
As-OI structures were successfully fabricated on Si by DWB. Strained In
_0.53
Ga
_0.47
As-OI MOSFETs with Ni-InGaAs metal S/D have successfully operated, for the first time. MOSFETs with 1.7 % tensile strain exhibits 1.65 × effective mobility (μ
_eff
) enhancement against InGaAs MOSFET without strain with maintaining high I
_on
/I
_off
ratio of ~10
⁵
. It is revealed from Hall measurements that the μ
_eff
enhancement is attributed to the increase in mobile free electron concentration due to the lowering in the conduction band edge induced by tensile strain.