Ultralow-voltage operation of Silicon-on-Thin-BOX (SOTB) 2Mbit SRAM down to 0.37 V utilizing adaptive back bias

We demonstrated record 0.37V minimum operation voltage (V
_min
) of 2Mb Silicon-on-Thin-Buried-oxide (SOTB) 6T-SRAM. Thanks to the small variability of SOTB (A
_VT
~1.3 mVμm) and adaptive back biasing (ABB), V
_min
was lowered down to ~0.4 V regardless of temperature. Both fast access time and small standby leakage were achieved by ABB.