Low-Leakage TiO$_{\bf 2}$ Nanowire Dielectric MOS Device Using Ag Schottky Gate Contact

We have demonstrated the advantage of using a Schottky gate contact and TiO
₂
nanowire (NW) high- k dielectric in MOS device and silver as the gate electrode. The glancing angle deposited TiO
₂
NW when used as the gate dielectric over the thin film (TF) significantly improved the electrical characteristics in terms of low Dit (4.17 × 10
¹⁰
cm
^-2
·eV
^-1
) and low leakage current (8.8 × 10
^-7
A/cm
²
) at +1 V bias.