I-V characterization of graphene nanoribbon FET coupling Schrödinger-Poisson equation

This paper presents details of a coupled Schrödinger-Poisson solver for modeling I-V characteristics of graphene nanoribbon field-effect transistors (GNR-FET). Poisson solution is obtained using a three-dimensional finite difference algorithm. The Schrödinger solution is implemented by the scattering matrix method which results in spatially unbounded wavefunctions, defined on the nanoribbon surface, are normalized to the flux computed by the Landauer formula. The resultant I-V characteristic of the device is then analyzed.