Tunneling and sensing effects of high quality InN nanowires

High quality InN nanowires (NWs) grown by chemical vapor deposition (CVD) has been investigated for sensing applications. The NWs were synthesized using a novel approach that enhanced the cracking of NH
₃
precursor and dramatically improving the growth rate and material quality. These InN NWs based field effect transistors (FETs) showed excellent gate control and were highly sensitive to variety of gaseous and vapor phase analytes, including acetone and water vapors. With very high carrier density (>10
¹⁹
cm
^-3
), and narrow diameter (even <;10 nm), these InN NWs demonstrate to be suitable for highly sensitive and selective gaseous detection based on the field emission method, with specific and low turn-on voltage.