Ultralow-power 160-to-10Gb/s optical demultiplexing using four-wave mixing in deposited silicon waveguides

Utilizing a 6-mm-long hydrogenated amorphous silicon nanowaveguide, we demonstrate error-free (BER <; 10
^-9
) 160-to-10 Gb/s OTDM demultiplexing using ultralow switching peak powers of 50 mW. This material is deposited at low temperatures enabling a path toward multilayer integration and therefore massive scaling of the number of devices in a single photonic chip.