Controllable growth of copper fractal aggregates on structurally modified silicon surface

Copper layers of highly developed surface have been formed by electrodeposition technique on structurally modified silicon substrate. Silicon patterns were obtained by electrochemical anodizing as well as by wet etching and acted the part of solidification centers at the growth process. The effect of the current density on the morphology of copper fractal aggregates has been investigated. It was found that a change of current density has a significant impact on texture and fractal dimension of the aggregates. Increasing of the current density from 0.25 to 1.5 mA/cm
²
changes form of the fractals from spherical to symmetrically branched (dendritic) and fractal dimension from 2.55 up to 2.8 respectively. All the samples are of uniform quasi-periodical distribution of the aggregates over the surface that is substantially conditioned by properties of the modified surface.