Analysis of threshold voltage shifts in double gate tunnel FinFETs: Effects of improved electrostatics by gate dielectrics and back gate effects

We analyzed the threshold voltage (V
_th
) shift due to EOT scaling in double gate (DG) tunnel FinFETs (tFinFETs). It is found that V
_th
in tFinFETs has high sensitivity of EOT, which is quite different as compared with MOSFETs. We proposed a simple model which is indispensable to design the tFinFETs structure for the first time. In order to correct the V
_th
modulation due to EOT scaling in tFinFETs, we studied the back gate effect in independent-DG tFinFETs and revealed that the back bias is effective as is the case in the MOSFETs.