Sub-10nm 1T-1R cell design using HfOx based ReRAM cell

The operation properties of ReRAM for 1T1R structure are simulated using semi-empirical circuit model. From the simulation result, it has been found that the operation of 1T1R structure is seriously affected by various parasitics and the performance of access transistor. For sensing operation, a read circuit using constant current source provided better stability than constant voltage source usually used for charge-based memory device.