Study of Single Event Upsets in different double gate FinFET based SRAM topologies

Soft errors also known as Single Event Upsets (SEU) is a term that defines the non-permanent errors caused in microelectronic circuits when high energy particles strike at the sensitive regions of the devices. In this paper, independently driven double gate (IDDG) FinFET and simultaneously driven double gate (SDDG) FinFET based 6T-SRAM cells are studied for their soft error performance. Ten different topologies, nine IDDG based topologies namely Flex-V
TH
, Flex PG, PG-SN, PG-OSN, Flex PD, Flex PU, Flex-cell, Flex PUPG, Flex PDPG and one SDDG based topology are studied to find out the minimum dose required to flip the value stored in the SRAM cell using TSPICE simulations with 45 nm PTM model. Flex-PG and PG-OSN are having better immunity to radiation and a critical dose value of 1.18 MeV-cm
²
/ mg.