A 2.535 GHz fully integrated Doherty power amplifier in CMOS 65nm with constant PAE in backoff

A fully integrated Doherty power amplifier at 2.535 GHz is presented in 65 nm CMOS technology with constant PAE over a 8.75dB backoff. The amplifier has 23.4 dBm output power and both PAE peaks have the same level in 25%. Both sub-amplifiers have a single-ended cascode topology and optimized input and output networks to reduce losses and correctly balance their behavior.