Impact of nitrogen implant prior to the gate oxide growth on transient enhanced diffusion

The trend of reverse short channel effect (RSCE) with nitrogen implant dose, gate oxide thickness, and threshold implant dose have been measured and simulated. Thinner gate oxide reduces RSCE. Implanting nitrogen also reduces RSCE, but exactly in proportion to gate oxide reduction; no extra effect of the large nitrogen dose was found. Furthermore, a saturation of TED-induced dopant pile-up with accumulating implant dose is shown.